Luminescence studies in InxGa1−xN epitaxial layers with different indium contents-Reference-Cited by-同舟云学术

Luminescence studies in InxGa1−xN epitaxial layers with different indium contents

Published:2013-08 Issue:10 Volume:35 Page:1829-1833
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Wu T.Y.,Chang C.C.,Tiong K.K.,Lee Y.C.,Hu S.Y.,Lin L.Y.,Lin T.Y.,Feng Z.C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference30 articles.

1. Properties of InxGa1−xN films in terahertz range

2. Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes

3. AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor

4. High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator

5. MOVPE Growth of InxGa1−xN (x ∼ 0.4) and Fabrication of Homo-junction Solar Cells

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