High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3562326
Reference14 articles.
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4. In0.11Ga0.89N-based p-i-n photodetector
5. InGaN∕GaN multi-quantum-well ultraviolet photosensors by capping an unactivated Mg-doped GaN layer
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