Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction

Author:

Zhan Teng12ORCID,Sun Jianwen3,Feng Tao12,Zhang Yulong3,Zhou Binru12,Zhang Banghong12,Wang Junxi12,Sarro Pasqualina M.4,Zhang Guoqi4,Liu Zewen3,Yi Xiaoyan12,Li Jinmin12

Affiliation:

1. Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road 35A, 100083, Beijing, China

2. College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China

3. School of Integrated Circuits, Tsinghua University, 100084, Beijing, China

4. Department of Microelectronics, Delft University of Technology, 2628 CD Delft, The Netherlands

Abstract

A novel type of Schottky junction-based heterostructure UV detector integrates a AlGaN/GaN 2DEG field-effect transistor and a Ti/AlGaN Schottky junction. SE, PF emission and FN tunneling mechanisms are observed when the device is working at different reverse bias voltages.

Funder

Key Technologies Research and Development Program

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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