Reduction in threading dislocation densities in AlN epilayer by introducing a pulsed atomic-layer epitaxial buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2990048
Reference13 articles.
1. III–Nitride UV Devices
2. High quantum efficiency AlGaN solar-blind p-i-n photodiodes
3. Effect of initial process conditions on the structural properties of AlN films
4. Influence of polymer formation on metalorganic vapor-phase epitaxial growth of AlN
5. Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates
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