Influence of polymer formation on metalorganic vapor-phase epitaxial growth of AlN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Radio frequency-molecular beam epitaxial growth of InN epitaxial films on (0001) sapphire and their properties
2. Crystal Growth of High-Quality AlInN/GaN Superlattices and of Crack-Free AlN on GaN: Their Possibility of High Electron Mobility Transistor
3. AlGaN-based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW
4. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
5. A reaction-transport model for AlGaN MOVPE growth
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1. Process parameters simulation and analysis of a new reactor for high temperature MOCVD AlGaN growth;2023-10-25
2. Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis;Applied Physics Letters;2023-08-14
3. A numerical study of the effect of pulse duration on preventing particle generation during the AlN pulsed MOCVD process;Materials Science in Semiconductor Processing;2022-09
4. Strain relaxation and dislocation annihilation in compositionally graded α-(AlxGa1-x)2O3 layer for high voltage α-Ga2O3 power devices;Acta Materialia;2021-12
5. Design and Process Optimization of a New Reaction Cavity for High-Temperature MOCVD AlGaN Growth;Nano;2021-06-30
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