AlGaN-based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1772864
Reference8 articles.
1. Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
2. 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
3. 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
4. Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
5. Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm
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