Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1528726
Reference25 articles.
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3. High-Efficiency GaN/AlxGa1?xN Multi-Quantum-Well Light Emitter Grown on Low-Dislocation Density AlxGa1?xN
4. Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN
5. Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire
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