Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN-Reference-Cited by-同舟云学术

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Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN

Published:2002-04 Issue: Volume:237-239 Page:951-955
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Iwaya Motoaki,Terao Shinji,Sano Tomoaki,Ukai Tsutomu,Nakamura Ryo,Kamiyama Satoshi,Amano Hiroshi,Akasaki Isamu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

3. Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE

4. Effect of AlN Buffer Layer on AlGaN/α-Al2O3Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy

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1. Toward High-Performance AlGaN-Based UV-B LEDs: Engineering of the Strain Relaxation Process;Crystal Growth & Design;2024-04-17

2. Surface Morphology Evolution of AlGaN Microhoneycomb Structures during Epitaxial Overgrowth;physica status solidi (b);2024-01-07

3. A method for exfoliating AlGaN films from sapphire substrates using heated and pressurized water;Applied Physics Express;2022-10-18

4. Reduction of dislocation density in lattice-relaxed Al_0.68Ga_0.32N film grown on periodical 1 μm spacing AlN pillar concave-convex patterns and its effect on the performance of UV-B laser diodes;Applied Physics Express;2022-03-01

5. Drive High Power UVC‐LED Wafer into Low‐Cost 4‐Inch Era: Effect of Strain Modulation;Advanced Functional Materials;2022-02-05

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