Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1477620
Reference15 articles.
1. Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region
2. Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers
3. Room Temperature 339 nm Emission from Al0.13Ga0.87N/Al0.10Ga0.90N Double Heterostructure Light-Emitting Diode on Sapphire Substrate
4. Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells
5. Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells
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