Abstract
The high crystal quality and low dislocation densities of aluminum nitride (AlN) grown on flat and nano-patterned sapphire substrate that are synthesized by the metal-organic chemical vapor deposition (MOCVD) method are essential for the realization of high-efficiency deep ultraviolet light-emitting diodes. The micro-strains of 0.18 × 10−3 cm−2 for flat substrate AlN and 0.11 × 10−3 cm−2 for nano-patterned substrate AlN are obtained by X-ray diffractometer (XRD). The screw and edge dislocation densities of samples are determined by XRD and transmission electron microscope (TEM), and the results indicate that the nano-patterned substrates are effective in reducing the threading dislocation density. The mechanism of the variation of the threading dislocation in AlN films grown on flat and nano-patterned substrates is investigated comparatively. The etch pit density (EPD) determined by preferential chemical etching is about 1.04 × 108 cm−2 for AlN grown on a nano-patterned substrate, which is slightly smaller than the results obtained by XRD and TEM investigation. Three types of etch pits with different sizes are all revealed on the AlN surface using the hot KOH etching method.
Funder
Bagui Talent of Guangxi province
Talent Model Base
Disinfection Robot Based on High Power AlGaN-based UVLEDs
Guangxi Science and Technology Program
Guangxi University Foundation
Guangxi Science and Technology Base and talent Special project
Subject
General Materials Science,General Chemical Engineering
Cited by
4 articles.
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