The role of surface kinetics on composition and quality of AlGaN-Reference-Cited by-同舟云学术

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The role of surface kinetics on composition and quality of AlGaN

Published:2016-10 Issue: Volume:451 Page:65-71
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bryan Isaac,Bryan Zachary,Mita Seiji,Rice Anthony,Hussey Lindsay,Shelton Christopher,Tweedie James,Maria Jon-Paul,Collazo Ramón,Sitar Zlatko

Funder

Army Research Office

National Defense Science and Engineering Graduate

Association of Research Libraries

National Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

2. High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance

3. Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

4. Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface

5. Quantum Cascade Laser

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1. Impact of the number of well-barrier pair in the MQWs on the carrier distribution and confinement for the AlGaN-based far-UVC LEDs;Optical Materials Express;2024-05-30

2. Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes;Advanced Electronic Materials;2024-03-09

3. Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors;Applied Physics Letters;2024-02-05

4. Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer;Applied Physics Letters;2024-02-05

5. Defect Behavior on the Degradation of AlGaN-Based 234 nm LEDs;IEEE Transactions on Electron Devices;2024-02

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