Author:
Dalmau R.,Moody B.,Schlesser R.,Mita S.,Xie J.,Feneberg M.,Neuschl B.,Thonke K.,Collazo R.,Rice A.,Tweedie J.,Sitar Z.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. R. Dalmau and Z. Sitar , inEncyclopedia of Materials: Science and Technology, K. H. J. Buschow, R. W. Cahn, M. C. Flemings, B. Ilschner, E. J. Kramer, S. Mahajan, and P. Veyssière , Editors, Updates, p. 1, Elsevier Science, Oxford (2008).
3. Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates
4. Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals
5. Short-period superlattices of AlN∕Al[sub 0.08]Ga[sub 0.92]N grown on AlN substrates
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