Defect Behavior on the Degradation of AlGaN-Based 234 nm LEDs-Reference-Cited by-同舟云学术

Defect Behavior on the Degradation of AlGaN-Based 234 nm LEDs

Published:2024-02 Issue:2 Volume:71 Page:1102-1108
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Li Min¹^ORCID,Su Mengwei¹^ORCID,Chen Zhiqiang¹,Deng Shaodong¹,Zhu Xinglin¹,Zheng Gang¹,Yang Yufei¹,Wu Wei¹,Deng Jianyu¹,Sun Wenhong²^ORCID

Affiliation:

1. Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning, China

2. Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, and the State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, China

Funder

National Key Research and Development Program of China

High Luminous Efficiency and Long Life Deep Ultraviolet (DUV) Light-Emitting Diodes (LED) Technology

Disinfection Robot Based on High Power AlGaN-based Ultraviolet Light-Emitting Diode

Guangxi Science and Technology Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10413236/10373797.pdf?arnumber=10373797

Reference49 articles.

1. Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies

2. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

3. Application of 233 nm far-UVC LEDs for eradication of MRSA and MSSA and risk assessment on skin models

4. Degradation of (In)AlGaN-Based UVB LEDs and Migration of Hydrogen

5. Improve efficiency and long lifetime UVC LEDs with wavelengths between 230 and 237 nm