High quantum efficiency AlGaN solar-blind p-i-n photodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1650550
Reference11 articles.
1. Future of Al x Ga 1-x N materials and device technology for ultraviolet photodetectors
2. Short-wavelength solar-blind detectors-status, prospects, and markets
3. AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire
4. 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
5. Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
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