Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review-Reference-Cited by-同舟云学术

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Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review

Published:2022-06 Issue: Volume:143 Page:106545
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Tan A.K.,Hamzah N.A.,Ahmad M.A.,Ng S.S.,Hassan Z.

Funder

Universiti Sains Malaysia

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference134 articles.

1. Recent progress in group III-nitride nanostructures: from materials to applications;Chen;Mater. Sci. Eng. R Rep.,2020

2. Review—recent advances and challenges in indium gallium nitride (InxGa1-xN) materials for solid state lighting;Kour;ECS Journal of Solid State Science and Technology,2020

3. Thermal stability of indium nitride at elevated temperatures and nitrogen pressures;MacChesney;Mater. Res. Bull.,1970

4. Study of high quality indium nitride films grown on Si (100) substrate by RF-MOMBE with GZO and AlN buffer layers;Chen;J. Nanomater.,2012

5. Large-scale cubic InN nanocrystals by a combined solution and vapor-phase method under silica confinement;Chen;J. Am. Chem. Soc.,2012

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1. A strategy to grow three dimensional InGaN/GaN heterostructure exclusively on non-polar m-plane of two-step etched GaN nanorods;Applied Surface Science;2024-05

2. InGaN based Schottky barrier solar cell: Study of the temperature dependence of electrical characteristics;Materials Science in Semiconductor Processing;2024-03

3. A CFD study of the gas reaction path in growth of InN films in metal–organic chemical vapor deposition;Journal of Crystal Growth;2024-01

4. III-nitride nanowires for emissive display technology;Journal of Information Display;2023-11-21

5. Large scale fabrication of GaN nanorods template and characterization of MOCVD grown InGaN/GaN quantum wells on {101‾0} plane of GaN nanorods;Optical Materials;2023-11

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