Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
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5. Carbon doping in GaAs using trimethylarsine by metalorganic chemical vapor deposition with high-speed rotating susceptor
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1. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
2. Fuchs-Kliewer surface phonon and optical function of InGaAs alloy;AIP Conference Proceedings;2012
3. Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor;Microelectronics Journal;2004-02
4. Effect of growth rate on surface morphology of heavily carbon-doped InGaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
5. The initial stages of growth of CuPtB ordered Ga0.52In0.48P/GaAs and Ga0.47In0.53As/InP;Applied Physics Letters;2000-02-21
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