Low energy proton induced single event upset in 65 nm DDR and QDR commercial SRAMs-Reference-Cited by-同舟云学术

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Low energy proton induced single event upset in 65 nm DDR and QDR commercial SRAMs

Published:2017-09 Issue: Volume:406 Page:443-448
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ye B.,Liu J.,Wang T.S.,Liu T.Q.,Maaz K.,Luo J.,Wang B.,Yin Y.N.,Ji Q.G.,Sun Y.M.,Hou M.D.

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

1. Single event upset and charge collection measurements using high energy protons and neutrons

2. Assessment of neutron- and proton-induced nuclear interaction and ionization models in Geant4 for Simulating single event effects

3. Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

4. Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of secondary ions and their impact on single-event upset in TMD devices under proton irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-02

2. Exploring the impact of shrinking feature sizes on proton-induced saturation SEU cross-section through simulation;Microelectronics Reliability;2023-12

3. An Analysis of the Significance of the ¹⁴N(n, p) ¹⁴C Reaction for Single-Event Upsets Induced by Thermal Neutrons in SRAMs;IEEE Transactions on Nuclear Science;2023-08

4. Proton Direct Ionization Upsets at Tens of MeV;IEEE Transactions on Nuclear Science;2023-04

5. Mechanisms and shielding characteristics of alpha particle-induced soft errors in 28 and 40 nm configuration memories of SRAM-based FPGAs;Microelectronics Reliability;2023-01

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