An Analysis of the Significance of the 14N(n, p) 14C Reaction for Single-Event Upsets Induced by Thermal Neutrons in SRAMs
Author:
Affiliation:
1. CERN, Geneva, Switzerland
2. Institute Laue-Langevin, Grenoble, France
3. Science and Technology Facilities Council, Didcot, U.K
4. Institute d’Électronique et des Systèmes, Université de Montpellier, Montpellier, France
Funder
European Union’s Horizon 2020 Research and Innovation Program through the Marie Sklodowska Curie
European Union’s Horizon 2020 Research and Innovation Program
French National Program “Investissements d’Avenir, IRT Nanoelec”
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/10221199/10024997.pdf?arnumber=10024997
Reference51 articles.
1. High-Energy Versus Thermal Neutron Contribution to Processor and Memory Error Rates
2. Thermal Neutron-Induced Single-Event Upsets in Microcontrollers Containing Boron-10
3. Thermal neutron-induced soft-error rates for flip-flop designs in 16-nm bulk FinFET technology
4. Thermal Neutron-Induced SEUs in the LHC Accelerator Environment
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