Characteristics of secondary ions and their impact on single-event upset in TMD devices under proton irradiation-Reference-Cited by-同舟云学术

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Characteristics of secondary ions and their impact on single-event upset in TMD devices under proton irradiation

Published:2024-02 Issue: Volume:547 Page:165216
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ye Bing,Cai Li,Ni Fafu,Zeng Jian^ORCID,Wu Zhaoxi,Luo Jie,Zhai Pengfei,Yan Xiaoyu,Sun Youmei,Liu Jie

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference25 articles.

1. D. Fleetwood, Radiation Effects in a Post-Moore World, IEEE Trans. Nucl. Sci. PP (2021) 1–1. https://doi.org/10.1109/TNS.2021.3053424.

2. A sub thermionic tunnel field-effect transistor with an atomically thin channel;Sarkar;Nature,2015

3. Ge GAA FETs and TMD FinFETs for the applications beyond Si—a review;Lee;IEEE J. Electron Devices Soc.,2016

4. C.-S. Pang, et al., First Demonstration of WSe2 Based CMOS-SRAM, in: 2018 IEEE Int. Electron Devices Meet. IEDM, 2018: p. 22.2.1-22.2.4. https://doi.org/10.1109/IEDM.2018.8614572.

5. Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio;Vu;Nat. Commun.,2016

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