Optical properties of InxGa1−xAs/GaAs MQW structures on (111)B GaAs grown by MBE: dependence on substrate miscut
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Strain diagnosis of (001) and (111) InGaAs layers by optical techniques
2. Critical layer thickness on (111)B‐oriented InGaAs/GaAs heteroepitaxy
3. Viable strained‐layer laser at λ=1100 nm
4. Relaxation mechanisms in single InxGa1−xAs epilayers grown on misoriented GaAs(111¯)B substrates
5. Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (111)B GaAs grown by MBE
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. MBE growth and processing of diluted nitride quantum well lasers on GaAs (111)B;Microelectronics Journal;2006-12
2. Characterisation of strained (111)B InGaAs/GaAs quantum well lasers with intracavity optical modulator;Microelectronics Journal;2002-07
3. Strain relaxation behavior of InxGa1−xAs quantum wells on vicinal GaAs (111)B substrates;Applied Physics Letters;2002-03-04
4. Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition;Journal of Applied Physics;2001-05
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