Viable strained‐layer laser at λ=1100 nm
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345758
Reference14 articles.
1. High‐power phase‐locked InGaAs strained‐layer quantum well heterostructure periodic laser array
2. InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition
3. Long‐lived InGaAs quantum well lasers
4. Continuous operation of high-power (200 mW) strained-layer Ga1−xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm
5. Strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection lasers
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