1070nm and 1118nm high power lasers grown with partial strain balancing
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Viable strained‐layer laser at λ=1100 nm
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1. Advances in high power semiconductor diode lasers;SPIE Proceedings;2007-11-29
2. Facet-passivation processes for the improvement of Al-containing semiconductor laser diodes;Journal of Lightwave Technology;2006-02
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