Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. 1.2 [micro sign]m range GaInAs SQW lasers using Sb as surfactant
2. Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers
3. High-indium-content InxGa1−xAs/GaAs quantum wells with emission wavelengths above 1.25 μm at room temperature
4. Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy
5. Viable strained‐layer laser at λ=1100 nm
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface;Journal of Crystal Growth;2013-05
2. Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition;Applied Physics Letters;2013-03-18
3. Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices;Applied Physics Letters;2013-01-07
4. Highly tensile-strained, type-II, Ga1−xInxAs/GaSb quantum wells;Applied Physics Letters;2010-02-08
5. Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations;The European Physical Journal B;2009-05
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