High-indium-content InxGa1−xAs/GaAs quantum wells with emission wavelengths above 1.25 μm at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1762985
Reference25 articles.
1. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT
2. Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers
3. High‐speed InGaAs/GaAs strained multiple quantum well lasers with low damping
4. Quantum‐well infrared photodetectors
5. Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures
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4. Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001);Japanese Journal of Applied Physics;2013-04-01
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