Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1470223
Reference18 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Band Anticrossing in GaInNAs Alloys
3. Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
4. Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy
5. Effect of nitrogen on the temperature dependence of the energy gap inInxGa1−xAs1−yNy/GaAssingle quantum wells
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