Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124429
Reference12 articles.
1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
2. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
3. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
4. Bowing parameter of the band-gap energy of GaNxAs1−x
5. Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
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