Effects of insertion of strain-engineering Ga(In)NAs layers on optical properties of InAs/GaAs quantum dots for high-efficiency solar cells-Reference-Cited by-同舟云学术

Effects of insertion of strain-engineering Ga(In)NAs layers on optical properties of InAs/GaAs quantum dots for high-efficiency solar cells

Published:2016-02 Issue: Volume:52 Page:177-180
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Pavelescu Emil-Mihai,Polojärvi Ville,Schramm Andreas,Tukiainen Antti,Aho Arto,Zhang Wenxin,Puustinen Janne,Salmi Joel,Guina Mircea

Funder

EEA Financial Mechanism

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference11 articles.

1. A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

2. Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x

3. Thermodynamic analysis of the MBE growth of GaInAsN

4. Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

5. Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

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