Thermodynamic analysis of the MBE growth of GaInAsN-Reference-Cited by-同舟云学术

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Thermodynamic analysis of the MBE growth of GaInAsN

Published:2001-08-30 Issue:10 Volume:16 Page:831-835
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Odnoblyudov V A,Egorov A Yu,Kovsh A R,Zhukov A E,Maleev N A,Semenova E S,Ustinov V M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. GaInNAs: a novel material for long-wavelength semiconductor lasers

2. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 – 1.38 [micro sign]m

3. 8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m

4. GaAs-based long-wavelength lasers

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of growth rate on structural property and adatom migration behaviors for growth of GaInNAs/GaAs (001) by molecular beam epitaxy;Journal of Applied Physics;2018-03-07

2. Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications;Nanoscale Research Letters;2017-05-18

3. Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells;Solar Energy Materials and Solar Cells;2016-05

4. Effects of insertion of strain-engineering Ga(In)NAs layers on optical properties of InAs/GaAs quantum dots for high-efficiency solar cells;Optical Materials;2016-02

5. The temperature dependence of atomic incorporation characteristics in growing GaInNAs films;Journal of Applied Physics;2015-02-07

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