Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335391
Reference14 articles.
1. Defects in epitaxial multilayers
2. Ga(As,P) strained-layer superlattices: A ternary semiconductor with independently adjustable band gap and lattice constant
3. Electronic properties of strained-layer superlattices
4. Doping and transport studies in InxGa1−xAs/GaAs strained-layer superlattices
5. Effects of strain and layer thickness on the growth of InxGa1−xAs–GaAs strained-layer superlattices
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