In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. Self-assembled InAs quantum dots on GaSb/GaAs(001) layers by molecular beam epitaxy
2. Self-Formation of High-Density and High-Uniformity InAs Quantum Dots on Sb/GaAs Layers by Molecular Beam Epitaxy
3. Sb-mediated growth of high-density InAs quantum dots and GaAsSb embedding growth by MBE
4. Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy
5. InAs(Sb) quantum dots grown on GaAs by MBE
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures;Optical Materials;2022-12
2. Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing;Surface Science;2018-06
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