1.2 [micro sign]m range GaInAs SQW lasers using Sb as surfactant
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20000976?crawler=true&mimetype=application/pdf
Reference14 articles.
1. Growth of highly strained GaInAs/GaAs quantum wells for 1.2μm wavelength lasers
2. 1.2-μm GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor deposition
3. Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
4. 1.29 [micro sign]m GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance
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1. Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowires;Nano Letters;2017-05-31
2. Effect of interface roughness on Auger recombination in semiconductor quantum wells;AIP Advances;2017-03
3. Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation;Applied Physics Letters;2016-05-02
4. GaNSb alloys grown with H2and N2carrier gases;Japanese Journal of Applied Physics;2016-02-26
5. Effect of antimony on the deep-level traps in GaInNAsSb thin films;Applied Physics Letters;2014-09-15
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