1.29 [micro sign]m GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19991513?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 – 1.38 [micro sign]m
3. 1.3 [micro sign]m continuous-wave operation of GainNAs lasers grown by metal organic chemical vapour deposition
4. High power CW operation of InGaAsN lasers at 1.3 [micro sign]m
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