Growth of highly strained GaInAs/GaAs quantum wells for 1.2μm wavelength lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. High-performance 1.06-μm selectively oxidized vertical-cavity surface-emitting lasers with InGaAs-GaAsP strain-compensated quantum wells
2. GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
3. Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting laser
4. Room-temperature pulsed operation of GaAsSb/GaAs vertical-cavity surface-emitting lasers
5. Viable strained‐layer laser at λ=1100 nm
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