Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4795866
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1. Fiber‐Optic Communication Systems
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4. Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3-$\mu{\hbox {m}}$ Double Quantum-Well GaInNAs–GaAs Lasers
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