Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.0–1.2 μm due to increased charge carrier's localization-Reference-Cited by-同舟云学术

Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.0–1.2 μm due to increased charge carrier's localization

Published:2014-11-28 Issue:20 Volume:116 Page:203102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kryzhkov D. I.¹²,Yablonsky A. N.¹²,Morozov S. V.¹²,Aleshkin V. Ya.¹²,Zvonkov B. N.³,Vikhrova O. V.³,Krasilnik Z. F.¹²

Affiliation:

1. Institute for Physics of Microstructures RAS, Nizhny Novgorod 603950, Russia

2. Lobachevsky State University of Nizhny Novgorod, N. Novgorod 603950, Russia

3. Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, N. Novgorod 603950, Russia

Funder

Russian Scientific Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4901641

Reference22 articles.

1. Room-temperature pulsed operation of GaAsSb/GaAs vertical-cavity surface-emitting lasers

2. AlxGa1−xAsySb1−y phase diagram

3. Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy

4. GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates

5. Carrier recombination in 1.3μm GaAsSb∕GaAs quantum well lasers

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