Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (111)B GaAs grown by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Low-current operation of high-speed InP/InGaAs heterojunction bipolar transistors
2. Strain in pseudomorphic films grown on arbitrarily oriented substrates
3. Strain-generated electric fields in [111] growth axis strained-layer superlattices
4. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. MBE growth and processing of diluted nitride quantum well lasers on GaAs (111)B;Microelectronics Journal;2006-12
2. Spontaneous emission study of (111) InGaAs/GaAs quantum well lasers;Microelectronics Journal;2002-07
3. Piezoelectric effects in InGaAs quantum well lasers grown on (111)B GaAs substrates;SPIE Proceedings;2001-07-09
4. Optical properties of InxGa1−xAs/GaAs MQW structures on (111)B GaAs grown by MBE: dependence on substrate miscut;Journal of Crystal Growth;1999-05
5. Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy;Microelectronics Journal;1999-04
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