MBE growth and processing of diluted nitride quantum well lasers on GaAs (111)B
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference11 articles.
1. Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (111)B GaAs grown by MBE
2. Optical properties of InxGa1−xAs/GaAs MQW structures on (111)B GaAs grown by MBE: dependence on substrate miscut
3. Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (111)b substrates by molecular beam epitaxy
4. Spinodal decomposition during step-flow growth
5. Thermodynamic analysis of the MBE growth of GaInAsN
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1. Effect of substrate orientation on band structure of bulk III-V semiconductors;AIP Advances;2022-11-01
2. Orientation dependence of electronic structure and optical gain of (11N)-oriented III-V-N quantum wells;Journal of Applied Physics;2013-02-28
3. Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy;Applied Physics Letters;2010-08-16
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