Critical layer thickness on (111)B‐oriented InGaAs/GaAs heteroepitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106728
Reference19 articles.
1. Defects in epitaxial multilayers
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3. Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
4. Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy
5. Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction
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