Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98004
Reference9 articles.
1. Defects in epitaxial multilayers
2. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
3. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
4. Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
5. Optical characterization of pseudomorphic InxGa1−xAs–GaAs single‐quantum‐well heterostructures
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