Strain relaxation in semiconductor wafer bonding

Abstract

Abstract The strain relaxation process in wafer-bonded semiconductor heterostructures is numerically investigated, in contrast to those formed by epitaxial growth. A kinetic model of strain relaxation in semiconductor layers is re-established for highly lattice-mismatched heterostructures. Numerical simulations are then performed by using the model to analyze the time evolution of the strain, the strain rate, and the misfit dislocation density. The calculation results present a slow strain relaxation behavior in the lattice-mismatched heterostructures wafer-bonded at lower temperatures than those for epitaxial growth, to suppress the thermodynamically preferred dislocation generation by sustaining the material system at a metastable state. The time constant of strain relaxation in a typical range of wafer bonding temperatures, normalized by the melting temperature, of 0.2–0.4 is found to be 3 × 105–2 × 1021 s for a lattice mismatch of 0.04. This relaxation time contrasts with 14 s for the case of heteroepitaxy at a typical normalized temperature of 0.6, thus evidencing the nonequilibrium crystalline stability in wafer bonding.