Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals-Reference-Cited by-同舟云学术

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Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals

Published:2001-01-15 Issue:Part 2, No. 1A/B Volume:40 Page:L16-L19
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Detchprohm Theeradetch,Yano Masahiro,Sano Shigekazu,Nakamura Ryo,Mochiduki Shingo,Nakamura Tetsuya,Amano Hiroshi,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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