Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95783
Reference12 articles.
1. Defects in epitaxial multilayers
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4. The role of lattice misfit in epitaxy
5. InxGa1−xAs−InyGa1−yAsstrained-layer superlattices: A proposal for useful, new electronic materials
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