High figure of merit spin polarized electron sources grown via MOCVD

Author:

Belfore Benjamin1,Masters Adam1ORCID,Poudel Deewakar1ORCID,Blume Greg1ORCID,Polly Stephen2ORCID,Wang Erdong3ORCID,Hubbard Seth M2,Stutzman Marcy4ORCID,Grames Joseph Michael4ORCID,Poelker Matt4,Grau Matt1ORCID,Marsillac Sylvain1ORCID

Affiliation:

1. Old Dominion University 1 , 5115 Hampton Blvd, Norfolk, Virginia 23529, USA

2. Rochester Institute of Technology 2 , 1 Lomb Memorial Drive, Rochester, New York 14623, USA

3. Brookhaven National Laboratory 3 , 2 Center Street, Upton, New York 11973, USA

4. Thomas Jefferson National Accelerator facility 4 , 12000 Jefferson Avenue, Newport News, Virginia 23606, USA

Abstract

Spin polarized photocathodes are key to the future operation of electron accelerators such as the ones at Thomas Jefferson National Accelerator Facility and Brookhaven National Laboratory. Currently, these photocathodes come in short supply due to limited production by molecular beam epitaxy. By developing a process to implement similar structures using metal organic chemical vapor deposition, the availability of these devices can be increased. In this paper, we detail the implementation of recent photocathode advancements via metal organic chemical vapor deposition process and show an improvement in both polarization and quantum efficiency of our devices compared to those fabricated via molecular beam epitaxy, with devices reaching 82% polarization and 2.9% quantum efficiency.

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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