Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy-Reference-Cited by-同舟云学术

Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

Author:

Wen Lei¹,Gao Fangliang¹,Zhang Xiaona²,Zhang Shuguang¹³,Li Jingling¹,Guan Yunfang¹,Wang Wenliang¹,Zhou Shizhong¹,Lin Zhiting¹^ORCID,Li Guoqiang¹³

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China

2. Beijing University of Technology, Institute of Microstructure and Properties of Advanced Materials, Beijing 100022, China

3. Department of Electronic Materials, South China University of Technology, Guangzhou 510641, China

Funder

Excellent Youth Foundation of Guangdong Scientific Committee

National Science Fund for Excellent Young Scholars of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference48 articles.

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