Lattice-engineered Si1-xGex-buffer on Si(001) for GaP integration

Author:

Skibitzki Oliver,Paszuk Agnieszka,Hatami Fariba,Zaumseil Peter,Yamamoto Yuji,Andreas Schubert Markus,Trampert Achim,Tillack Bernd,Ted Masselink W.,Hannappel Thomas,Schroeder Thomas

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference34 articles.

1. Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition

2. A. M. Carlin, T. J. Grassman, M. R. Brenner, J. Grandal, C. Ratcliff, L. Yang, M. Mills, P. Sharma, E. A. Fitzgerald, and S. A. Ringel, in 38th IEEE Photovoltaic Specialists Conference (PVSC) (IEEE, 2012), pp. 000918–000921.

3. Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers

4. In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si(100)

5. Optical properties of GaAs on (100) Si using molecular beam epitaxy

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