Strain relaxation behavior of InxGa1−xAs quantum wells on vicinal GaAs (111)B substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1455691
Reference13 articles.
1. Dislocation arrangements in gaas/ga1−xlnxas multilayers grown on (001), (111) and (112) substrates
2. Critical layer thickness on (111)B‐oriented InGaAs/GaAs heteroepitaxy
3. Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy
4. Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces
5. Piezoelectric effects in strained‐layer superlattices
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1. Dislocation generation mechanisms in heavily boron-doped diamond epilayers;Applied Physics Letters;2021-02-01
2. Self-organized GaAs patterns on misoriented GaAs (111)B substrates using dilute nitrides by molecular beam epitaxy;Microelectronics Journal;2006-12
3. Room-temperature laser emission of GaInNAs-GaAs quantum wells grown on GaAs (111)B;IEEE Photonics Technology Letters;2005-11
4. InGaAsN on GaAs (111)B for telecommunication laser application;Journal of Crystal Growth;2005-05
5. Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (111)b substrates by molecular beam epitaxy;Journal of Crystal Growth;2004-09
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