InGaAsN on GaAs (111)B for telecommunication laser application
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. GaNAs grown by gas source molecular beam epitaxy
2. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
3. Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
4. A 1.3-µm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
5. Critical layer thickness on (111)B‐oriented InGaAs/GaAs heteroepitaxy
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1. Electron-related properties in a GaAs/GaAlAs Ultra-thin Core/Shell Film through external field direction for energy and photonic devices;Physica B: Condensed Matter;2024-10
2. Effect of Substrate-Surface Orientation on the N Incorporation in GaAsN Films on GaAs Grown by MOVPE;Advanced Materials Research;2008-08
3. Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy;Journal of Applied Physics;2007-05-15
4. Patterning by rapid thermal annealing of GaAs layers grown on diluted nitride QWs;Microelectronics Journal;2006-12
5. Room-temperature laser emission of GaInNAs-GaAs quantum wells grown on GaAs (111)B;IEEE Photonics Technology Letters;2005-11
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