Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

Published:2007-05-15 Issue:10 Volume:101 Page:103526
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Miguel-Sánchez J.,Guzmán A.,Jahn U.,Trampert A.,Ulloa J. M.,Muñoz E.,Hierro A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2733740

Reference34 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. 8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m

3. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

4. 1.32-μm GaInNAs-GaAs laser with a low threshold current density

5. The opportunities, successes and challenges for GaInNAsSb

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