Characterisation of strained (111)B InGaAs/GaAs quantum well lasers with intracavity optical modulator
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference16 articles.
1. Analysis of a proposed bistable injection laser
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4. Bistability in inhomogeneously pumped quantum well laser diodes
5. Numerical modeling of bistable laser diodes with saturable absorbers
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1. Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold;Applied Physics Letters;2015-02-16
2. Static and dynamic properties of multi-section InGaN-based laser diodes;Journal of Applied Physics;2012-11-15
3. Reduced threshold current in (111)B grown InGaAs∕AlGaAs laser diodes: The positive role of piezoelectric effect;Applied Physics Letters;2007-03-19
4. Threshold current reduction due to piezoelectric effects in InGaAs/AlGaAs laser diodes;Journal of Physics: Conference Series;2005-01-01
5. Comparative study of and InGaAs single quantum well laser diodes;Physica E: Low-dimensional Systems and Nanostructures;2004-07
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