Threshold current reduction due to piezoelectric effects in InGaAs/AlGaAs laser diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference9 articles.
1. Observation of room‐temperature blue shift and bistability in a strained InGaAs‐GaAs 〈111〉 self‐electro‐optic effect device
2. Excitonic optical nonlinearity induced by internal field screening in (211) oriented strained‐layer superlattices
3. Characterisation of strained (111)B InGaAs/GaAs quantum well lasers with intracavity optical modulator
4. Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Extending device performance in photonic devices using piezoelectric properties;SPIE Proceedings;2013-12-07
2. Pseudomorphic growth of InAs on misoriented GaAs for extending quantum cascade laser wavelength;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-11
3. Sensitivity of Strained and Unstrained Structure Growth on GaAs (111)B;Journal of Electronic Materials;2012-04-03
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